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VRF152
RF FET Transistor, 130 V, 20 A, 300 W, M174
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Disponible sur commande
Délais d’approvisionnement standard du fabricant : 15 semaine(s)
Informations produit
FabricantMICROSEMI
Réf. FabricantVRF152
Code Commande79R4883
Fiche technique
Drain Source Voltage Vds130V
Continuous Drain Current Id20A
Power Dissipation300W
Power Dissipation Pd300W
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleM174
RF Transistor CaseM174
No. of Pins4Pins
Channel TypeN Channel
Operating Temperature Max-
Transistor MountingFlange
Product Range-
MSL-
SVHCNo SVHC (07-Jul-2017)
Aperçu du produit
The VRF152 is a N-channel gold-metalized Silicon RF Power Transistor designed for broadband applications requiring high power and gain without compromising reliability, ruggedness or inter-modulation distortion.
- Improved Ruggedness
- Excellent stability and low IMD
- Common source configuration
- Nitride passivated
- Refractory gold metallization
- 30:1 Load VSWR capability at specified operating conditions
- 150W with 22dB Typical gain at 30MHz, 50V
- 150W with 14dB Typical gain at 175MHz, 50V
Applications
Industrial, Commercial, Defence, Military & Aerospace, Power Management
Spécifications techniques
Drain Source Voltage Vds
130V
Power Dissipation
300W
Operating Frequency Min
-
Transistor Case Style
M174
No. of Pins
4Pins
Operating Temperature Max
-
Product Range
-
SVHC
No SVHC (07-Jul-2017)
Continuous Drain Current Id
20A
Power Dissipation Pd
300W
Operating Frequency Max
-
RF Transistor Case
M174
Channel Type
N Channel
Transistor Mounting
Flange
MSL
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (07-Jul-2017)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit