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CM100DY-34A
IGBT Module, Dual [Half Bridge], 100 A, 1.7 kV, 960 W, 150 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 48 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM100DY-34A
Code Commande30M3580
Fiche technique
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage1.7kV
Collector Emitter Saturation Voltage Vce(on)1.7kV
Power Dissipation Pd960W
Power Dissipation960W
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.7kV
Transistor Case StyleModule
IGBT TerminationStud
No. of Pins7Pins
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max1.7kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
100A
Collector Emitter Saturation Voltage
1.7kV
Power Dissipation Pd
960W
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
1.7kV
IGBT Termination
Stud
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.7kV
Power Dissipation
960W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
No. of Pins
7Pins
Collector Emitter Voltage Max
1.7kV
Product Range
-
Documents techniques (2)
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Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
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Certificat de conformité du produit