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CM1400DUC-24NF
IGBT Module, Dual [Half Bridge], 1.4 kA, 1.2 kV, 8.9 kW, 150 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 18 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM1400DUC-24NF
Code Commande58T5721
Fiche technique
Transistor PolarityDual N Channel
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current1.4kA
DC Collector Current1.4kA
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage1.2kV
Power Dissipation8.9kW
Power Dissipation Pd8.9kW
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins21Pins
IGBT TerminationTab
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 5 [Trench Gate]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
Transistor Polarity
Dual N Channel
Continuous Collector Current
1.4kA
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
8.9kW
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Max
150°C
No. of Pins
21Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
1.4kA
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation Pd
8.9kW
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
IGBT Technology
IGBT 5 [Trench Gate]
Product Range
-
Documents techniques (2)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
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Certificat de conformité du produit