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CM200DX-34SA
IGBT Module, Dual [Half Bridge], 200 A, 1.9 V, 2 kW, 150 °C, Module
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Disponible sur commande
Délais d’approvisionnement standard du fabricant : 28 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM200DX-34SA
Code Commande90W4342
Fiche technique
Transistor PolarityDual N Channel
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current200A
DC Collector Current200A
Collector Emitter Saturation Voltage Vce(on)1.9V
Collector Emitter Saturation Voltage1.9V
Power Dissipation2kW
Power Dissipation Pd2kW
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.7kV
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins11Pins
IGBT TerminationStud
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max1.7kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
Transistor Polarity
Dual N Channel
Continuous Collector Current
200A
Collector Emitter Saturation Voltage Vce(on)
1.9V
Power Dissipation
2kW
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
No. of Pins
11Pins
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
200A
Collector Emitter Saturation Voltage
1.9V
Power Dissipation Pd
2kW
Collector Emitter Voltage V(br)ceo
1.7kV
Transistor Case Style
Module
IGBT Termination
Stud
Collector Emitter Voltage Max
1.7kV
Product Range
-
Documents techniques (2)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
Télécharger le certificat de conformité du produit
Certificat de conformité du produit