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CM300DU-12H
IGBT Module, Dual [Half Bridge], 300 A, 600 V, 890 W, 150 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 27 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM300DU-12H
Code Commande48F4211
Fiche technique
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
Continuous Collector Current300A
DC Collector Current300A
Collector Emitter Saturation Voltage Vce(on)600V
Collector Emitter Saturation Voltage600V
Power Dissipation Pd890W
Power Dissipation890W
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
IGBT Technology-
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
300A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation Pd
890W
Junction Temperature, Tj Max
150°C
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
7Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
DC Collector Current
300A
Collector Emitter Saturation Voltage
600V
Power Dissipation
890W
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
600V
Product Range
-
Documents techniques (1)
Produits associés
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Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Non
Conforme à la norme RoHS Phthalates:Non
SVHC :To Be Advised
Télécharger le certificat de conformité du produit
Certificat de conformité du produit