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CM75TL-12NF
IGBT Module, Six Pack [Full Bridge], 75 A, 1.7 V, 430 W, 150 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 28 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM75TL-12NF
Code Commande19K9235
Fiche technique
Transistor PolaritySix N Channel
IGBT ConfigurationSix Pack [Full Bridge]
DC Collector Current75A
Continuous Collector Current75A
Collector Emitter Saturation Voltage1.7V
Collector Emitter Saturation Voltage Vce(on)1.7V
Power Dissipation Pd430W
Power Dissipation430W
Collector Emitter Voltage V(br)ceo600V
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins20Pins
IGBT TerminationTab
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
Transistor Polarity
Six N Channel
DC Collector Current
75A
Collector Emitter Saturation Voltage
1.7V
Power Dissipation Pd
430W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Max
150°C
No. of Pins
20Pins
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Six Pack [Full Bridge]
Continuous Collector Current
75A
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation
430W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
600V
Product Range
-
Documents techniques (2)
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Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
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Certificat de conformité du produit