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PS22A76
IGBT Module, Three Phase Inverter, 25 A, 1.9 V, 113.6 W, 100 °C, DIP
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 21 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantPS22A76
Code Commande16R1509
Fiche technique
IGBT ConfigurationThree Phase Inverter
DC Collector Current25A
Continuous Collector Current25A
Collector Emitter Saturation Voltage1.9V
Collector Emitter Saturation Voltage Vce(on)1.9V
Power Dissipation Pd113.6W
Power Dissipation113.6W
Operating Temperature Max100°C
Junction Temperature, Tj Max100°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleDIP
No. of Pins30Pins
IGBT TerminationSolder
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
IGBT Configuration
Three Phase Inverter
Continuous Collector Current
25A
Collector Emitter Saturation Voltage Vce(on)
1.9V
Power Dissipation
113.6W
Junction Temperature, Tj Max
100°C
Transistor Case Style
DIP
IGBT Termination
Solder
Collector Emitter Voltage Max
1.2kV
Product Range
-
DC Collector Current
25A
Collector Emitter Saturation Voltage
1.9V
Power Dissipation Pd
113.6W
Operating Temperature Max
100°C
Collector Emitter Voltage V(br)ceo
1.2kV
No. of Pins
30Pins
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
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Certificat de conformité du produit