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AFT09MS031GNR1
RF FET Transistor, 40 V, 317 W, 764 MHz, 941 MHz, TO-270
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Informations produit
FabricantNXP
Réf. FabricantAFT09MS031GNR1
Code Commande05W7251
Fiche technique
Drain Source Voltage Vds40V
Continuous Drain Current Id-
Power Dissipation317W
Power Dissipation Pd317W
Operating Frequency Min764MHz
Operating Frequency Max941MHz
Transistor Case StyleTO-270
RF Transistor CaseTO-270
No. of Pins2Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (27-Jun-2024)
Aperçu du produit
- RF power LDMOS transistor
- Wide operating frequency range from 764 to 941MHz
- Unmatched input and output allowing wide frequency range utilization
- Integrated ESD protection
- Integrated stability enhancements
- Exceptional thermal performance
- High ruggedness N-channel enhancement mode lateral MOSFET
Spécifications techniques
Drain Source Voltage Vds
40V
Power Dissipation
317W
Operating Frequency Min
764MHz
Transistor Case Style
TO-270
No. of Pins
2Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Power Dissipation Pd
317W
Operating Frequency Max
941MHz
RF Transistor Case
TO-270
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
MSL
MSL 3 - 168 hours
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (27-Jun-2024)
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Certificat de conformité du produit