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MRF6V2300NBR5
RF FET Transistor, 110 V, 10 MHz, 600 MHz, TO-272
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 16 semaine(s)
Informations produit
FabricantNXP
Réf. FabricantMRF6V2300NBR5
Code Commande95M9601
Fiche technique
Drain Source Voltage Vds110V
Continuous Drain Current Id-
Power Dissipation-
Power Dissipation Pd-
Operating Frequency Min10MHz
Operating Frequency Max600MHz
Transistor Case StyleTO-272
No. of Pins4Pins
RF Transistor CaseTO-272
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (27-Jun-2024)
Aperçu du produit
The MRF6V2300NBR5 is a N-channel RF Power FET designed primarily for CW large signal output and driver applications with frequencies up to 600MHz. Devices are unmatched and are suitable for use in scientific applications.
- Characterized with series equivalent large signal impedance parameters
- Qualified up to a maximum of 50VDD operation
- Integrated ESD protection
- 225°C Capable plastic package
Applications
Industrial, Medical, Power Management
Spécifications techniques
Drain Source Voltage Vds
110V
Power Dissipation
-
Operating Frequency Min
10MHz
Transistor Case Style
TO-272
RF Transistor Case
TO-272
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Power Dissipation Pd
-
Operating Frequency Max
600MHz
No. of Pins
4Pins
Operating Temperature Max
225°C
Transistor Mounting
Flange
MSL
MSL 3 - 168 hours
Documents techniques (3)
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1 produit trouvé
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (27-Jun-2024)
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Certificat de conformité du produit