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2N5657G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 350 V, 500 mA, 20 W, TO-225, Through Hole
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ManufacturerONSEMI
Manufacturer Part No2N5657GCopy
Newark Part No.26K5297
Product Range2NXXXX Series
Your Part Number
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part No2N5657GCopy
Newark Part No.26K5297
Product Range2NXXXX Series
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max350V
Collector Emitter Voltage V(br)ceo350V
Continuous Collector Current500mA
Power Dissipation20W
Power Dissipation Pd20W
DC Collector Current500mA
DC Current Gain hFE10hFE
Transistor MountingThrough Hole
Transistor Case StyleTO-225
No. of Pins3Pins
Transition Frequency10MHz
DC Current Gain hFE Min10hFE
Operating Temperature Max150°C
Qualification-
Product Range2NXXXX Series
SVHCNo SVHC (19-Jan-2021)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
350V
Power Dissipation
20W
DC Collector Current
500mA
Transistor Mounting
Through Hole
No. of Pins
3Pins
DC Current Gain hFE Min
10hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
350V
Continuous Collector Current
500mA
Power Dissipation Pd
20W
DC Current Gain hFE
10hFE
Transistor Case Style
TO-225
Transition Frequency
10MHz
Operating Temperature Max
150°C
Product Range
2NXXXX Series
SVHC
No SVHC (19-Jan-2021)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate