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BBS3002-DL-1E
Power MOSFET, P Channel, 60 V, 100 A, 0.0044 ohm, TO-263 (D2PAK), Surface Mount
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Modèle arrêté
Informations produit
FabricantONSEMI
Réf. FabricantBBS3002-DL-1E
Code Commande42AC1708
Fiche technique
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id100A
On Resistance Rds(on)0.0044ohm
Drain Source On State Resistance0.0044ohm
Transistor Case StyleTO-263 (D2PAK)
Gate Source Threshold Voltage Max-
Transistor MountingSurface Mount
Power Dissipation Pd90W
Rds(on) Test Voltage10V
Power Dissipation90W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Spécifications techniques
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0044ohm
Transistor Case Style
TO-263 (D2PAK)
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.0044ohm
Gate Source Threshold Voltage Max
-
Power Dissipation Pd
90W
Power Dissipation
90W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Documents techniques (3)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead
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