Imprimer la page
BS170_D26Z
Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Disponible sur commande
Délais d’approvisionnement standard du fabricant : 8 semaine(s)
Options de conditionnement
Informations produit
FabricantONSEMI
Réf. FabricantBS170_D26Z
Code Commande15R3418
Fiche technique
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id500mA
Drain Source On State Resistance1.2ohm
On Resistance Rds(on)1.2ohm
Transistor MountingThrough Hole
Power Dissipation Pd830mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Transistor Case StyleTO-92
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (15-Jan-2018)
Aperçu du produit
The BS170_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This device has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.
- High density cell design for low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- 60V drain gate voltage (VDGR)
- ±20V continuous gate source voltage (VGSS)
- 150°C/W thermal resistance, junction to ambient
Spécifications techniques
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-92
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
500mA
On Resistance Rds(on)
1.2ohm
Power Dissipation Pd
830mW
Gate Source Threshold Voltage Max
2.1V
Power Dissipation
830mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Documents techniques (2)
Produits de remplacement pour BS170_D26Z
3 produit(s) trouvé(s)
Produits associés
2 produit(s) trouvé(s)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (15-Jan-2018)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit