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FDC6321C
Dual MOSFET, N and P Channel, 25 V, 25 V, 680 mA, 460 mA, 450 mohm
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 2 semaine(s)
| Quantité | Prix |
|---|---|
| 3000+ | 0,425 $ |
| 6000+ | 0,400 $ |
| 12000+ | 0,380 $ |
| 18000+ | 0,360 $ |
| 30000+ | 0,348 $ |
Prix pour :Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
1 275,00 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantONSEMI
Réf. FabricantFDC6321C
Code Commande67R2033
Fiche technique
Channel TypeN and P Channel
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id680mA
Drain Source Voltage Vds25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel680mA
Continuous Drain Current Id P Channel460mA
Drain Source On State Resistance N Channel450mohm
Drain Source On State Resistance P Channel1.1ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel900mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Aperçu du produit
The FDC6321C is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
Applications
Industrial, Power Management
Spécifications techniques
Channel Type
N and P Channel
Continuous Drain Current Id
680mA
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id P Channel
460mA
Drain Source On State Resistance P Channel
1.1ohm
No. of Pins
6Pins
Power Dissipation P Channel
900mW
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds
25V
Continuous Drain Current Id N Channel
680mA
Drain Source On State Resistance N Channel
450mohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Documents techniques (2)
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Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (27-Jun-2024)
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Certificat de conformité du produit