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FDG6322C
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 220 mA, 220 mA, 2.6 ohm
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Disponible sur commande
Délais d’approvisionnement standard du fabricant : 13 semaine(s)
| Quantité | Prix |
|---|---|
| 500+ | 0,362 $ |
Prix pour :Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
1 086,00 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantONSEMI
Réf. FabricantFDG6322C
Code Commande58K1454
Fiche technique
Channel TypeComplementary N and P Channel
Continuous Drain Current Id220mA
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel25V
Drain Source Voltage Vds25V
Continuous Drain Current Id N Channel220mA
Continuous Drain Current Id P Channel220mA
Drain Source On State Resistance N Channel2.6ohm
Drain Source On State Resistance P Channel2.6ohm
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel300mW
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Aperçu du produit
The FDG6322C is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
- Very small package outline
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
- Gate-source Zener for ESD ruggedness
Applications
Industrial, Power Management
Spécifications techniques
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds
25V
Continuous Drain Current Id P Channel
220mA
Drain Source On State Resistance P Channel
2.6ohm
No. of Pins
6Pins
Power Dissipation P Channel
300mW
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
220mA
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
220mA
Drain Source On State Resistance N Channel
2.6ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Documents techniques (3)
Produits de remplacement pour FDG6322C
1 produit trouvé
Produits associés
1 produit trouvé
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (10-Jun-2022)
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Certificat de conformité du produit