FDN357N
Power MOSFET, N Channel, 30 V, 1.9 A, 0.06 ohm, SOT-23, Surface Mount
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| Quantité | Prix |
|---|---|
| 1+ | 0,654 $ |
| 10+ | 0,444 $ |
| 25+ | 0,417 $ |
| 50+ | 0,390 $ |
| 100+ | 0,363 $ |
| 250+ | 0,333 $ |
| 500+ | 0,302 $ |
| 1000+ | 0,273 $ |
Informations produit
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Aperçu du produit
The FDN357N is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount-package. It comes with industry standard outline surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
- High density cell design for extremely low RDS (ON)
- Exceptional ON-resistance and maximum DC current capability
Spécifications techniques
N Channel
30V
0.06ohm
SOT-23
500mW
1.6V
3Pins
-
MSL 1 - Unlimited
N Channel
1.9A
0.053ohm
Surface Mount
4.5V
500mW
150°C
-
No SVHC (27-Jun-2024)
Documents techniques (2)
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit