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FDP51N25
Power MOSFET, N Channel, 250 V, 51 A, 0.048 ohm, TO-220, Through Hole
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3 697 En Stock
| Quantité | Prix |
|---|---|
| 1+ | 4,980 $ |
| 10+ | 3,770 $ |
| 100+ | 2,550 $ |
| 500+ | 2,480 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
4,98 $
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Informations produit
FabricantONSEMI
Réf. FabricantFDP51N25
Code Commande31Y1385
Fiche technique
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id51A
Drain Source On State Resistance0.048ohm
On Resistance Rds(on)0.048ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd320W
Gate Source Threshold Voltage Max5V
Power Dissipation320W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Aperçu du produit
The FDP51N25 is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor's planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- 55nC Typical low gate charge
- 63pF Typical low Crss
Applications
Power Management, Lighting, Consumer Electronics
Spécifications techniques
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.048ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
51A
On Resistance Rds(on)
0.048ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
320W
Power Dissipation
320W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Documents techniques (2)
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Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Y-Ex
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead (27-Jun-2024)
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