FDT439N
Power MOSFET, N Channel, 30 V, 6.3 A, 0.045 ohm, SOT-223, Surface Mount
| Quantité | Prix |
|---|---|
| 3000+ | 0,704 $ |
| 6000+ | 0,661 $ |
| 12000+ | 0,627 $ |
| 18000+ | 0,595 $ |
| 30000+ | 0,574 $ |
Informations produit
Aperçu du produit
The FDT439N is a 30V N-channel 2.5V specified enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. This very high density process is specially tailored to minimize on-state resistance and provide superior switching performance. It is well suited for low voltage and low current applications. UniFET™ MOSFET is high voltage MOSFET family based on advanced planar stripe and DMOS technology. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
- Switching loss improvements
- Lower conduction loss
- 100% avalanche tested
- Smaller stored energy in dynamic characteristics
- A lower gate charge (Qg) performance
- Improved system reliability in PFC and soft switching topologies
Spécifications techniques
N Channel
30V
0.045ohm
Surface Mount
3W
670mV
4Pins
-
MSL 1 - Unlimited
N Channel
6.3A
0.045ohm
4.5V
SOT-223
3W
150°C
-
Lead
Documents techniques (3)
Produits de remplacement pour FDT439N
1 produit trouvé
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit