FDV303N

The FDV303N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions. It has excellent on state resistance even at gate drive voltages as low as 2.5V and designed for application in battery circuits using either one lithium or three cadmium or NHM cells, inverters, high efficiency miniature discrete DC/DC conversion in electronic devices like cellular phones and pagers.

• Drain to source voltage (Vds) of 25V
• Gate to source voltage of 8V
• Continuous drain current (Id) of 680mA
• Power dissipation (Pd) of 350mW
• Low on state resistance of 330mohm at Vgs 4.5V
• Operating temperature range from -55°C to 150°C