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FDY4000CZ
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 600 mA, 600 mA, 0.7 ohm
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Modèle arrêté
Informations produit
FabricantONSEMI
Réf. FabricantFDY4000CZ
Code Commande34M6134
Fiche technique
Channel TypeComplementary N and P Channel
Continuous Drain Current Id600mA
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel600mA
Continuous Drain Current Id P Channel600mA
Drain Source On State Resistance N Channel0.7ohm
Drain Source On State Resistance P Channel0.7ohm
Transistor Case StyleSC-89
No. of Pins6Pins
Power Dissipation N Channel625mW
Power Dissipation P Channel625mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Aperçu du produit
The FDY4000CZ is a N/P-channel complementary MOSFET designed using advanced PowerTrench® process. The device is suitable for use with level shifting, power supply converter circuits, load/power switching cell phones and pagers applications.
Spécifications techniques
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
600mA
Drain Source On State Resistance P Channel
0.7ohm
No. of Pins
6Pins
Power Dissipation P Channel
625mW
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
600mA
Drain Source On State Resistance N Channel
0.7ohm
Transistor Case Style
SC-89
Power Dissipation N Channel
625mW
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Documents techniques (4)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit