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FQB47P06TM-AM002
Power MOSFET, P Channel, 60 V, 47 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount
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Informations produit
FabricantONSEMI
Réf. FabricantFQB47P06TM-AM002
Code Commande61M6403
Fiche technique
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id47A
On Resistance Rds(on)0.026ohm
Drain Source On State Resistance0.026ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd160W
Rds(on) Test Voltage-10V
Gate Source Threshold Voltage Max-4V
Power Dissipation160W
No. of Pins2Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Aperçu du produit
The FQB47P06TM_AM002 is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 84nC typical low gate charge
- 320pF typical low Crss
Spécifications techniques
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.026ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
160W
Gate Source Threshold Voltage Max
-4V
No. of Pins
2Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
47A
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
-10V
Power Dissipation
160W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Documents techniques (2)
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Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Y-Ex
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead (27-Jun-2024)
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