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FQB7P20TM_F085
Power MOSFET, P Channel, 200 V, 7.3 A, 0.54 ohm, TO-263 (D2PAK), Surface Mount
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 11 semaine(s)
Informations produit
FabricantONSEMI
Réf. FabricantFQB7P20TM_F085
Code Commande64R3109
Fiche technique
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id7.3A
Drain Source On State Resistance0.54ohm
On Resistance Rds(on)0.54ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd90W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation90W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Aperçu du produit
The FQB7P20TM_F085 is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and withstand high energy pulse in the avalanche and communication mode. It is well suitable for high efficiency switching DC-to-DC converters.
- Fast switching
- Improved dV/dt capability
- AEC-Q101 Qualified
- 100% avalanche tested
- 19nC typical low gate charge
- 25pF typical low Crss
Spécifications techniques
Transistor Polarity
P Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.54ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
90W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
7.3A
On Resistance Rds(on)
0.54ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
90W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Documents techniques (2)
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Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Y-Ex
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead
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