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FQU13N06LTU
Power MOSFET, N Channel, 60 V, 11 A, 0.092 ohm, TO-251AA, Through Hole
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Modèle arrêté
Informations produit
FabricantONSEMI
Réf. FabricantFQU13N06LTU
Code Commande31Y1567
Fiche technique
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id11A
On Resistance Rds(on)0.092ohm
Drain Source On State Resistance0.092ohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Power Dissipation Pd28W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation28W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Aperçu du produit
The FQU13N06LTU is a QFET® enhancement-mode N-channel Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- Low level gate drive requirements allowing direct operation form logic drivers
- 100% avalanche tested
- 4.8nC typical low gate charge
- 17pF typical low Crss
Spécifications techniques
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.092ohm
Transistor Case Style
TO-251AA
Power Dissipation Pd
28W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
11A
Drain Source On State Resistance
0.092ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
28W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Documents techniques (4)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Y-Ex
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead (17-Jan-2022)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit