HUF75639P3
Power MOSFET, N Channel, 100 V, 56 A, 0.025 ohm, TO-220AB, Through Hole
| Quantité | Prix |
|---|---|
| 500+ | 2,240 $ |
| 1000+ | 2,020 $ |
| 2500+ | 1,660 $ |
| 5000+ | 1,600 $ |
Informations produit
Aperçu du produit
The HUF75639P3 is a N-channel Power MOSFETs manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery operated products.
- Peak current vs. pulse width curve
- UIS Rating curve
- Temperature compensated PSPICE®/SABER™ electrical, SPICE & SABER thermal impedance simulation models
Applications
Power Management, Portable Devices, Motor Drive & Control
Spécifications techniques
N Channel
100V
0.025ohm
Through Hole
10V
TO-220AB
3Pins
-
-
N Channel
56A
0.025ohm
200W
4V
200W
175°C
-
Lead
Documents techniques (2)
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit