MMUN2211LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
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| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 0,016 $ | 0,02 $ |
| Total Prix | 0,02 $ | ||
| Quantité | Prix | Tarif promotionnel |
|---|---|---|
| 1+ | 0,188 $ | 0,016 $ |
| 25+ | 0,120 $ | 0,016 $ |
| 50+ | 0,099 $ | 0,016 $ |
| 100+ | 0,077 $ | 0,016 $ |
| 250+ | 0,067 $ | 0,016 $ |
| 500+ | 0,057 $ | 0,016 $ |
| 1000+ | 0,050 $ | 0,016 $ |
| Quantité | Prix |
|---|---|
| 3000+ | 0,041 $ |
| 6000+ | 0,038 $ |
| 12000+ | 0,037 $ |
Informations produit
Aperçu du produit
The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO−236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
- Simplifies circuit design
- Compact board space
- Reduced component count
- AEC-Q101 qualified
- Base input resistor is 10Kohm
- Base emitter resistor is 10kohm
- Collector emitter voltage VCEO of 50VDC
- Continuous collector current of 100mAdc
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Spécifications techniques
Single NPN
-
10kohm
SOT-23
Surface Mount
150°C
-
MSL 1 - Unlimited
50V
100mA
10kohm
3 Pin
400mW
35hFE
-
No SVHC (25-Jun-2025)
Documents techniques (2)
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit