NDT3055L
Power MOSFET, N Channel, 60 V, 4 A, 0.1 ohm, SOT-223, Surface Mount
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| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 2,270 $ | 2,27 $ |
| Total Prix | 2,27 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 2,270 $ |
| 25+ | 1,440 $ |
| 50+ | 1,200 $ |
| 100+ | 0,955 $ |
| 250+ | 0,854 $ |
| 500+ | 0,751 $ |
| 1000+ | 0,684 $ |
| 2500+ | 0,665 $ |
| Quantité | Prix |
|---|---|
| 4000+ | 0,588 $ |
| 8000+ | 0,570 $ |
Informations produit
Aperçu du produit
The NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC converters, PWM motor controls and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- Low drive requirements allowing operation directly from logic drivers
Applications
Power Management, Motor Drive & Control, Automotive
Spécifications techniques
N Channel
4A
SOT-223
10V
3W
150°C
-
No SVHC (25-Jun-2025)
60V
0.1ohm
Surface Mount
1.6V
4Pins
-
MSL 1 - Unlimited
Documents techniques (2)
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit