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NTHL040N120M3S
Silicon Carbide MOSFET, N Channel, 51 A, 1.2 kV, 0.052 ohm, TO-247
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| Quantity | Price |
|---|---|
| 1+ | $15.770 |
| 10+ | $9.410 |
| 25+ | $9.210 |
| 60+ | $9.010 |
| 120+ | $8.800 |
| 270+ | $8.610 |
Price for:Each
Minimum: 1
Multiple: 1
$15.77
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHL040N120M3SCopy
Newark Part No.57AK6411
Technical Datasheet
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id51A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.052ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation329W
Operating Temperature Max175°C
Product Range-
SVHCLead
Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
51A
Drain Source On State Resistance
0.052ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
329W
Product Range
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
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