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NVBG032N065M3S
Silicon Carbide MOSFET, Single, N Channel, 52 A, 650 V, 44 mohm, TO-263HV (D2PAK)
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
FabricantONSEMI
Réf. FabricantNVBG032N065M3S
Code Commande20AM4399
Gamme de produitEliteSiC Series
Votre numéro de pièce
795 En Stock
| Quantité | Prix |
|---|---|
| 1+ | 23,580 $ |
| 10+ | 17,960 $ |
| 25+ | 17,450 $ |
| 50+ | 16,920 $ |
| 100+ | 16,410 $ |
| 250+ | 16,030 $ |
| 500+ | 15,640 $ |
Prix pour :Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
23,58 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantONSEMI
Réf. FabricantNVBG032N065M3S
Code Commande20AM4399
Gamme de produitEliteSiC Series
Fiche technique
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id52A
Drain Source Voltage Vds650V
Drain Source On State Resistance44mohm
Transistor Case StyleTO-263HV (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4V
Power Dissipation200W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead
Aperçu du produit
NVBG032N065M3S is an EliteSiC 650V M3S MOSFET in a 7 pin D2PAK package. It uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. Typical applications include automotive on board charger and automotive DC−DC converter for EV/HEV.
- Drain to source voltage is 650V, maximum drain current is 52A
- Typical RDS(ON) = 32mohm at VGS = 18V
- Ultra low gate charge QG(tot) = 69nC
- High speed switching with low capacitance (Coss = 113pF)
- 100% avalanche tested
- AEC−Q101 qualified and PPAP capable
- Operating junction temperature range from -55 to +175°C
Spécifications techniques
MOSFET Module Configuration
Single
Continuous Drain Current Id
52A
Drain Source On State Resistance
44mohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
SVHC
Lead
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-263HV (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
200W
Product Range
EliteSiC Series
Documents techniques (1)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead
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