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SCT2080KEC
Silicon Carbide MOSFET, Single, N Channel, 35 A, 1.2 kV, 0.08 ohm, TO-247
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Modèle arrêté
Informations produit
FabricantROHM
Réf. FabricantSCT2080KEC
Code Commande04X6732
Fiche technique
Transistor PolarityN Channel
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id35A
On Resistance Rds(on)0.08ohm
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
Power Dissipation Pd179W
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4V
Power Dissipation179W
Operating Temperature Max150°C
Product Range-
MSLMSL 1 - Unlimited
SVHCLead (08-Jul-2021)
Aperçu du produit
The SCT2080KEC is a N-channel SiC (Silicon Carbide) Power MOSFET with high voltage resistance, low ON resistance and fast switching speed.
- Fast Reverse Recovery
- Easy to Parallel
Applications
Industrial, Audio, Signal Processing, Motor Drive & Control
Spécifications techniques
Transistor Polarity
N Channel
Channel Type
N Channel
On Resistance Rds(on)
0.08ohm
Drain Source On State Resistance
0.08ohm
Power Dissipation Pd
179W
Rds(on) Test Voltage
18V
Power Dissipation
179W
Product Range
-
SVHC
Lead (08-Jul-2021)
MOSFET Module Configuration
Single
Continuous Drain Current Id
35A
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
No. of Pins
3Pins
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
MSL
MSL 1 - Unlimited
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead (08-Jul-2021)
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Certificat de conformité du produit