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SKM400GB12V
IGBT Module, Half Bridge, 612 A, 1.75 V, 175 °C, Module
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Informations produit
FabricantSEMIKRON
Réf. FabricantSKM400GB12V
Code Commande55X3199
Fiche technique
IGBT ConfigurationHalf Bridge
Continuous Collector Current612A
DC Collector Current612A
Collector Emitter Saturation Voltage Vce(on)1.75V
Collector Emitter Saturation Voltage1.75V
Power Dissipation-
Power Dissipation Pd-
Junction Temperature, Tj Max175°C
Operating Temperature Max175°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyV-IGBT
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Produits de remplacement pour SKM400GB12V
2 produit(s) trouvé(s)
Aperçu du produit
The SKM400GB12V is a SEMITRANS® 3 IGBT Module for use with AC inverter drives and electronic welders. It features insulated copper base plate using DBC technology (Direct Copper Bonding) and increased power cycling capability.
- Half-bridge switch
- V-IGBT = 6th generation Trench V-IGBT (Fuji)
- CAL4 = Soft switching 4th generation CAL-diode
- Integrated gate resistor
- Lowest switching losses at high di/dt
- UL recognized, file number E63532
Spécifications techniques
IGBT Configuration
Half Bridge
DC Collector Current
612A
Collector Emitter Saturation Voltage
1.75V
Power Dissipation Pd
-
Operating Temperature Max
175°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Continuous Collector Current
612A
Collector Emitter Saturation Voltage Vce(on)
1.75V
Power Dissipation
-
Junction Temperature, Tj Max
175°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Stud
IGBT Technology
V-IGBT
Product Range
-
Documents techniques (3)
Produits associés
4 produit(s) trouvé(s)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (15-Jun-2015)
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Certificat de conformité du produit