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GD200HFX65C8S
IGBT, HALF BRIDGE, 650V, 247A, MODULE
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Modèle arrêté
Informations produit
FabricantSTARPOWER
Réf. FabricantGD200HFX65C8S
Code Commande84AH5722
Fiche technique
IGBT ConfigurationHalf Bridge
Continuous Collector Current247A
DC Collector Current247A
Collector Emitter Saturation Voltage Vce(on)1.45V
Collector Emitter Saturation Voltage1.45V
Power Dissipation Pd612W
Power Dissipation612W
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo650V
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max650V
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
IGBT Configuration
Half Bridge
DC Collector Current
247A
Collector Emitter Saturation Voltage
1.45V
Power Dissipation
612W
Collector Emitter Voltage V(br)ceo
650V
Transistor Case Style
Module
Collector Emitter Voltage Max
650V
Transistor Mounting
Panel
SVHC
To Be Advised
Continuous Collector Current
247A
Collector Emitter Saturation Voltage Vce(on)
1.45V
Power Dissipation Pd
612W
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
IGBT Termination
Stud
IGBT Technology
Trench Field Stop
Product Range
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit