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3001380-F
Photodiode, Non-Amplified, 0.8 nA, 905 nm, TO-52-3
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Disponible sur commande
Délais d’approvisionnement standard du fabricant : 26 semaine(s)
Informations produit
FabricantTE CONNECTIVITY
Réf. Fabricant3001380-F
Code Commande77AK5541
Fiche technique
No. of Pins3Pins
Diode Case StyleTO-52
Wavelength of Peak Sensitivity905nm
Angle of Half Sensitivity ±-
Dark Current800pA
Operating Temperature Min-40°C
Operating Temperature Max100°C
Product Range-
Automotive Qualification Standard-
SVHCTo Be Advised
Aperçu du produit
3001380-F is a circular active area avalanche photodiode (APD) chip with NIR-enhanced sensitivity. It features a metal can-type hermetic TO52 package with a 905nm BP filter. Applications include LIDAR, laser range finder, high speed photometry, high speed optical communications.
- Slow multiplication curve, fast rise time, low noise
- Operating wavelength range from 750 to 910nm
- Dark current is 0.8nA typ at (M = 100)
- Capacitance is 1.2pF typ at (M = 100; f = 100KHz)
- Rise time is 0.9ns typ at (M = 100; λ = 905nm; RL = 50 ohm)
- Cut-off frequency is 0.4GHz typ at (-3dB)
- Breakdown voltage is 200V max at (IR = 2µA)
- Temperature coefficient is 1.45V/K typ at (change of VBR with temperature)
- Operating temperature range from -40 to 100°C
- TO52 package
Spécifications techniques
No. of Pins
3Pins
Wavelength of Peak Sensitivity
905nm
Dark Current
800pA
Operating Temperature Max
100°C
Automotive Qualification Standard
-
Diode Case Style
TO-52
Angle of Half Sensitivity ±
-
Operating Temperature Min
-40°C
Product Range
-
SVHC
To Be Advised
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit