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Modèle arrêté
Informations produit
FabricantVISHAY
Réf. FabricantVSMG3700-GS08
Code Commande31M2973
Fiche technique
Peak Wavelength850nm
Angle of Half Intensity60°
Diode Case StyleLCC
Radiant Intensity (Ie)10mW/Sr
Rise Time20ns
Fall Time tf13ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.5V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification StandardAEC-Q100
Product Range-
SVHCNo SVHC (16-Jan-2020)
Aperçu du produit
The VSMG3700-GS08 is a 850nm Infrared Emitting diode in GaAlAs double hetero (DH) technology. It moulded in a PLCC-2 package for surface mounting (SMD). It is suitable for use in infrared radiation source for operation with CMOS cameras (illumination) and high speed IR data transmission.
- High speed
- High reliability
- High radiant power
- High radiant intensity
- ϕ = ±60° Angle of half sensitivity
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
- 18MHz High modulation bandwidth (fc)
Spécifications techniques
Peak Wavelength
850nm
Diode Case Style
LCC
Rise Time
20ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
AEC-Q100
MSL
MSL 3 - 168 hours
Angle of Half Intensity
60°
Radiant Intensity (Ie)
10mW/Sr
Fall Time tf
13ns
Forward Voltage VF Max
1.5V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (16-Jan-2020)
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (16-Jan-2020)
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Certificat de conformité du produit