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SI1023X-T1-GE3
Dual MOSFET, P Channel, 20 V, 350 mA
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Modèle arrêté
Informations produit
FabricantVISHAY
Réf. FabricantSI1023X-T1-GE3
Code Commande16P3675
Fiche technique
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id350mA
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel350mA
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel2.7ohm
Transistor Case StyleSC-89
No. of Pins3Pins
Power Dissipation N Channel-
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Spécifications techniques
Channel Type
P Channel
Continuous Drain Current Id
350mA
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
350mA
Drain Source On State Resistance P Channel
2.7ohm
No. of Pins
3Pins
Power Dissipation P Channel
250mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SC-89
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (23-Jan-2024)
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Certificat de conformité du produit