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SI4982DY-T1-E3
Dual MOSFET, N Channel, 100 V, 2.6 A, 0.15 ohm
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 9 semaine(s)
Informations produit
FabricantVISHAY
Réf. FabricantSI4982DY-T1-E3
Code Commande85W2155
Fiche technique
Channel TypeN Channel
Continuous Drain Current Id2.6A
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds100V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel2.6A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.15ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Spécifications techniques
Channel Type
N Channel
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
2.6A
Drain Source Voltage Vds
100V
Continuous Drain Current Id N Channel
2.6A
Drain Source On State Resistance N Channel
0.15ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Documents techniques (1)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit