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SI7223DN-T1-GE3
MOSFET, DUAL P-CH, -30V, POWERPAK 1212
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
FabricantVISHAY
Réf. FabricantSI7223DN-T1-GE3
Code Commande56AC6592
Gamme de produitTrenchFET Gen III Series
Fiche technique
Informations produit
FabricantVISHAY
Réf. FabricantSI7223DN-T1-GE3
Code Commande56AC6592
Gamme de produitTrenchFET Gen III Series
Fiche technique
Channel TypeP Channel
Continuous Drain Current Id6A
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel6A
Drain Source On State Resistance N Channel0.022ohm
Drain Source On State Resistance P Channel0.022ohm
Transistor Case StylePowerPAK 1212
No. of Pins8Pins
Power Dissipation N Channel23W
Power Dissipation P Channel23W
Operating Temperature Max150°C
Product RangeTrenchFET Gen III Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Spécifications techniques
Channel Type
P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance P Channel
0.022ohm
No. of Pins
8Pins
Power Dissipation P Channel
23W
Product Range
TrenchFET Gen III Series
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
6A
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
6A
Drain Source On State Resistance N Channel
0.022ohm
Transistor Case Style
PowerPAK 1212
Power Dissipation N Channel
23W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Documents techniques (2)
Produits de remplacement pour SI7223DN-T1-GE3
1 produit trouvé
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (21-Jan-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit
Traçabilité des produits