| Quantité | Prix |
|---|---|
| 120+ | 4,480 $ |
| 270+ | 4,410 $ |
Informations produit
Aperçu du produit
The HUF75345G3 is a N-channel Power MOSFET manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery-operated products.
- Peak current vs. pulse width curve
- UIS Rating curve
- Simulation models - Temperature compensated PSPICE® & SABER™, thermal impedance SPICE & SABER
Applications
Power Management, Motor Drive & Control, Portable Devices
Spécifications techniques
N Channel
55V
0.007ohm
Through Hole
325W
4V
3Pins
-
-
N Channel
75A
0.007ohm
10V
TO-247
325W
175°C
-
Lead
Documents techniques (2)
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit