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Modèle arrêté
Informations produit
FabricantWOLFSPEED
Réf. FabricantC2M1000170D
Code Commande12X8366
Fiche technique
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id4.9A
Drain Source Voltage Vds1.7kV
On Resistance Rds(on)0.95ohm
Drain Source On State Resistance0.95ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.4V
Power Dissipation69W
Power Dissipation Pd69W
Operating Temperature Max150°C
Product Range-
MSL-
SVHCTo Be Advised
Aperçu du produit
The C2M1000170D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, ultra low drain gate capacitance, higher system efficiency, reduced cooling requirements and increased system reliability. Applications include auxiliary power supplies, switch mode power supplies and high voltage capacitive loads.
- Drain to source voltage (Vds) of 1.7kV
- Continuous drain current of 5A
- Power dissipation of 69W
- Operating junction temperature of -55°C to 150°C
- Low on state resistance of 1ohm at Vgs of 20V
Spécifications techniques
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.7kV
Drain Source On State Resistance
0.95ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.4V
Power Dissipation Pd
69W
Product Range
-
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
4.9A
On Resistance Rds(on)
0.95ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
69W
Operating Temperature Max
150°C
MSL
-
Documents techniques (3)
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Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Y-Ex
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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