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BFP650H6327XTSA1
Bipolar - RF Transistor, NPN, 4.5 V, 42 GHz, 500 mW, 150 mA, 100 hFE
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBFP650H6327XTSA1Copy
Manufacturer Standard Lead Time28 weeks
Newark Part No.
Full Reel86AK4388
Re-Reel85X4135RL
Cut Tape85X4135
Your Part Number
257 In Stock
24,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.737 | $3.68 |
| Total Price | $3.68 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $0.737 |
| 10+ | $0.523 |
| 15+ | $0.495 |
| 25+ | $0.467 |
| 50+ | $0.436 |
| 125+ | $0.406 |
| 250+ | $0.378 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.328 |
| 9000+ | $0.314 |
| 15000+ | $0.310 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBFP650H6327XTSA1Copy
Manufacturer Standard Lead Time28 weeks
Newark Part No.
Full Reel86AK4388
Re-Reel85X4135RL
Cut Tape85X4135
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo4.5V
Collector Emitter Voltage Max4.5V
Transition Frequency42GHz
Power Dissipation Pd500mW
Power Dissipation500mW
Continuous Collector Current150mA
DC Collector Current150mA
Transistor Case StyleSOT-343
DC Current Gain hFE100hFE
No. of Pins4Pins
RF Transistor CaseSOT-343
DC Current Gain hFE Min100hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
High linearity wideband silicon NPN RF bipolar transistor. Suitable for applications like low noise, high linearity amplifiers in SDARS receivers, low noise, high linearity amplifiers for ISM band applications and low noise, high linearity amplifiers for multimedia applications such as CATV.
- Based on SiGe:C technology
- Suitable for energy efficiency designs at frequency as high as 5GHz
- Remains cost competitive without compromising on ease of use
- Minimum noise figure NFmin = 1dB at 2.4GHz, 3V, 30mA
- High gain Gma = 17.5dB at 2.4GHz, 3V, 70mA
- OIP3 = 30dBm at 2.4GHz, 3V, 70mA
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
4.5V
Power Dissipation Pd
500mW
Continuous Collector Current
150mA
Transistor Case Style
SOT-343
No. of Pins
4Pins
DC Current Gain hFE Min
100hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage V(br)ceo
4.5V
Transition Frequency
42GHz
Power Dissipation
500mW
DC Collector Current
150mA
DC Current Gain hFE
100hFE
RF Transistor Case
SOT-343
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate