Print Page
BSC077N12NS3GATMA1
Power MOSFET, N Channel, 120 V, 98 A, 0.0077 ohm, PG-TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC077N12NS3GATMA1
Newark Part No.79X1335
Also Known AsBSC077N12NS3 G, SP000652750
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2.760 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.76
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC077N12NS3GATMA1
Newark Part No.79X1335
Also Known AsBSC077N12NS3 G, SP000652750
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id98A
Drain Source On State Resistance7700µohm
On Resistance Rds(on)0.0066ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Power Dissipation Pd139W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation139W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSC077N12NS3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Qualified according to JEDE for target applications
- Halogen-free, Green device
- Ideal for high-frequency switching and synchronous rectification
- Normal level
Applications
Power Management, Motor Drive & Control, Computers & Computer Peripherals, Portable Devices, LED Lighting
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
120V
Drain Source On State Resistance
7700µohm
Transistor Case Style
TDSON
Power Dissipation Pd
139W
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
98A
On Resistance Rds(on)
0.0066ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
139W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Alternatives for BSC077N12NS3GATMA1
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate