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BSC109N10NS3GATMA1
Power MOSFET, N Channel, 100 V, 63 A, 0.0109 ohm, TDSON, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $2.630 |
| 10+ | $1.660 |
| 25+ | $1.530 |
| 50+ | $1.390 |
| 100+ | $1.270 |
| 250+ | $1.140 |
| 500+ | $1.010 |
| 1000+ | $0.937 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.63
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC109N10NS3GATMA1
Newark Part No.47Y7998
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id63A
Drain Source On State Resistance0.0109ohm
On Resistance Rds(on)0.0098ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation Pd78W
Power Dissipation78W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
- OptiMOS™3 power transistor
- Very low gate charge for high frequency applications
- Optimized for DC-DC conversion
- N-channel, normal level
- Excellent gate charge x RDS(on) product (FOM)
- Very low on-resistance RDS(on)
- Qualified according to JEDEC for target applications
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0109ohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation Pd
78W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
63A
On Resistance Rds(on)
0.0098ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
Power Dissipation
78W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate