Print Page
BSZ097N04LSGATMA1
Power MOSFET, N Channel, 40 V, 40 A, 0.0097 ohm, PG-TSDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSZ097N04LSGATMA1
Newark Part No.60R2538
Also Known AsBSZ097N04LS G, SP000388296
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.010 |
| 10+ | $0.989 |
| 100+ | $0.764 |
| 500+ | $0.680 |
| 1000+ | $0.605 |
| 2500+ | $0.604 |
| 10000+ | $0.506 |
Price for:Each
Minimum: 1
Multiple: 1
$1.01
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ097N04LSGATMA1
Newark Part No.60R2538
Also Known AsBSZ097N04LS G, SP000388296
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id40A
On Resistance Rds(on)0.0081ohm
Drain Source On State Resistance0.0097ohm
Transistor Case StylePG-TSDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd35W
Gate Source Threshold Voltage Max1.2V
Power Dissipation35W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSZ097N04LS G is an OptiMOS™ N-channel Power MOSFET perfect choice for synchronous rectification in switched mode power supplies (SMPS). In addition it can be used for a broad range of industrial applications including fast switching DC-to-DC converter.
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Ideal for fast switching applications
- MSL1 rated
- Highest system efficiency
- Increased power density
- Very low voltage overshoot
- Logic level
- Superior thermal resistance
- 100% Avalanche tested
- Halogen-free, Green device
- Qualified according to JEDEC for target applications
Applications
Power Management, Motor Drive & Control, Consumer Electronics, Computers & Computer Peripherals, Communications & Networking, Portable Devices, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.0097ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
35W
Power Dissipation
35W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0081ohm
Transistor Case Style
PG-TSDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Alternatives for BSZ097N04LSGATMA1
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate