CY15B256J-SXE

CY15B256J-SXE is a CY15B256J 256Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. It performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. F-RAM also exhibits much lower power during writes than EEPROM because write operations do not require an internally elevated power supply voltage for write circuits.

• 256Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Fast two-wire serial interface (I²C), direct hardware replacement for serial EEPROM
• Supports legacy timings for 100KHz and 400KHz, low power consumption, 500μA standby current
• Low-voltage operation is VDD = 2.0V to 3.6V, AEC Q100 grade 1 compliant
• Automotive-E temperature is –40°C to +125°C
• 8-pin SOIC package
• It is capable of supporting 10^13 read/write cycles/10 million times more write cycles than EEPROM
• Provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement