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FF400R12KE3HOSA1
IGBT Array & Module Transistor, N Channel, 580 A, 1.7 V, 2 kW, 1.2 kV, Module
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| Quantity | Price |
|---|---|
| 1+ | $241.340 |
| 5+ | $230.450 |
| 10+ | $219.570 |
Price for:Each
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Multiple: 1
$241.34
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Product Information
ManufacturerINFINEON
Manufacturer Part NoFF400R12KE3HOSA1
Newark Part No.13AC8654
Product Range62mm C
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
DC Collector Current580A
Continuous Collector Current580A
Collector Emitter Saturation Voltage Vce(on)1.7V
Collector Emitter Saturation Voltage1.7V
Power Dissipation Pd2kW
Power Dissipation2kW
Operating Temperature Max125°C
Junction Temperature, Tj Max125°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationTab
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 3 [Trench/Field Stop]
Transistor MountingPanel
Product Range62mm C
SVHCNo SVHC (21-Jan-2025)
Product Overview
FF400R12KE3HOSA1 is a 62mm, 1200V, 400A dual IGBT module with TRENCHSTOP™ IGBT3 and emitter controlled high efficiency diode.
- Superior solution for frequency controlled inverter drives
- UL/CSA certification with UL1557 E83336, operating temperature up to 125°C (max 150°C)
- Optimized switching characteristic like softness and reduced switching losses
- Existing packages with higher current capability
- Flexibility, optimal electrical performance, highest reliability
- Collector-emitter voltage is 1200V at Tvj = 25°C
- Continuous DC collector current is 400A at TC = 80°C, Tvj max = 150°C
- Forward voltage is 1.65V typ at IF = 400A, VGE = 0V, Tvj = 25°C
- Temperature under switching conditions range from -40 to 125°C
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
580A
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation Pd
2kW
Operating Temperature Max
125°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Tab
IGBT Technology
IGBT 3 [Trench/Field Stop]
Product Range
62mm C
Transistor Polarity
N Channel
Continuous Collector Current
580A
Collector Emitter Saturation Voltage
1.7V
Power Dissipation
2kW
Junction Temperature, Tj Max
125°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for FF400R12KE3HOSA1
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate