FM28V102A-TG

FM28V102A-TG is a 64 K × 16 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM28V102A operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read cycles may be triggered by active low CE or simply by changing the address and write cycles may be triggered by active low CE or active low WE. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM28V102A ideal for nonvolatile memory applications requiring frequent or rapid writes.

• 1Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16
• Configurable as 128K × 8 using active low UB and active low LB
• NoDelay™ writes, page mode operation to 30-ns cycle time
• Advanced high-reliability ferroelectric process
• Industry-standard 64 K × 16 SRAM pinout
• No battery concerns, monolithic reliability
• True surface mount solution, no rework steps
• Superior for moisture, shock, and vibration
• Low-voltage operation range from 2.0V to 3.6V
• 44-pin TSOP II package, industrial temperature range from -40 to 85°C