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IGW40N120H3FKSA1
IGBT, 40 A, 2.4 V, 483 W, 1.2 kV, TO-247, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIGW40N120H3FKSA1Copy
Manufacturer Standard Lead Time28 weeks
Newark Part No.13T9421
Also Known AsIGW40N120H3, SP000667510
Your Part Number
448 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $8.800 |
| 10+ | $7.530 |
| 25+ | $6.260 |
| 50+ | $4.990 |
| 100+ | $4.570 |
| 250+ | $4.140 |
| 500+ | $4.060 |
Price for:Each
Minimum: 1
Multiple: 1
$8.80
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIGW40N120H3FKSA1Copy
Manufacturer Standard Lead Time28 weeks
Newark Part No.13T9421
Also Known AsIGW40N120H3, SP000667510
Technical Datasheet
Continuous Collector Current40A
DC Collector Current40A
Collector Emitter Saturation Voltage Vce(on)2.4V
Collector Emitter Saturation Voltage2.4V
Power Dissipation483W
Power Dissipation Pd483W
Collector Emitter Voltage V(br)ceo1.2kV
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IGW40N120H3 is a High Speed IGBT in Trench and field-stop technology recommended in combination with SiC diode IDH15S120. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.
- Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short-circuit capability
- Excellent performance
- Low switching and conduction losses
- Very good EMI behaviour
- Small gate resistor for reduced delay time and voltage overshoot
- Best-in-class IGBT efficiency and EMI behaviour
- Packaged with and without freewheeling diode for increased design freedom
- Green product
- Halogen-free
Applications
Alternative Energy, Power Management
Technical Specifications
Continuous Collector Current
40A
Collector Emitter Saturation Voltage Vce(on)
2.4V
Power Dissipation
483W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
DC Collector Current
40A
Collector Emitter Saturation Voltage
2.4V
Power Dissipation Pd
483W
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate