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IMBG75R011M2HXTMA1
SIC MOSFET, N-CH, 750V, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMBG75R011M2HXTMA1Copy
Manufacturer Standard Lead Time54 weeks
Newark Part No.14AN9654
Product RangeCoolSiC G2 Series
Your Part Number
50 In Stock
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Delivery in 4-6 Business Days(UK stock)
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| Quantity | Price |
|---|---|
| 1+ | $30.970 |
| 10+ | $29.030 |
| 25+ | $26.690 |
| 50+ | $24.820 |
| 100+ | $22.740 |
| 250+ | $21.340 |
| 500+ | $20.260 |
| 1000+ | $19.050 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$30.97
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG75R011M2HXTMA1Copy
Manufacturer Standard Lead Time54 weeks
Newark Part No.14AN9654
Product RangeCoolSiC G2 Series
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id129A
Drain Source Voltage Vds750V
Drain Source On State Resistance0.0138ohm
Transistor Case StyleTO-263
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation416W
Operating Temperature Max175°C
Product RangeCoolSiC G2 Series
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
129A
Drain Source On State Resistance
0.0138ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
SVHC
No SVHC (04-Feb-2026)
Channel Type
N Channel
Drain Source Voltage Vds
750V
Transistor Case Style
TO-263
Rds(on) Test Voltage
18V
Power Dissipation
416W
Product Range
CoolSiC G2 Series
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate