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ManufacturerINFINEON
Manufacturer Part NoIPB180P04P4L02ATMA2
Newark Part No.51AH5899
Product RangeOptiMOS-P2 Series
Technical Datasheet
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB180P04P4L02ATMA2
Newark Part No.51AH5899
Product RangeOptiMOS-P2 Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id180A
On Resistance Rds(on)0.0018ohm
Drain Source On State Resistance0.0024ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd150W
Gate Source Threshold Voltage Max1.7V
Power Dissipation150W
No. of Pins7Pins
Operating Temperature Max175°C
Product RangeOptiMOS-P2 Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0018ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
No. of Pins
7Pins
Product Range
OptiMOS-P2 Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Channel Type
P Channel
Continuous Drain Current Id
180A
Drain Source On State Resistance
0.0024ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
150W
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate