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IPB80P03P4L04ATMA2
Power MOSFET, P Channel, 30 V, 80 A, 0.0041 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB80P03P4L04ATMA2
Newark Part No.38AJ3758
Product RangeOptiMOS-P2 Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.440 |
| 10+ | $1.440 |
| 25+ | $1.440 |
| 50+ | $1.440 |
| 100+ | $1.440 |
| 250+ | $1.440 |
| 500+ | $1.440 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.44
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB80P03P4L04ATMA2
Newark Part No.38AJ3758
Product RangeOptiMOS-P2 Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0041ohm
On Resistance Rds(on)0.0034ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation Pd137W
Power Dissipation137W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS-P2 Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0041ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
137W
No. of Pins
3Pins
Product Range
OptiMOS-P2 Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Channel Type
P Channel
Continuous Drain Current Id
80A
On Resistance Rds(on)
0.0034ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
137W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate