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IPD122N10N3GATMA1
Power MOSFET, N Channel, 100 V, 59 A, 0.0105 ohm, TO-252 (DPAK), Surface Mount
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250 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.850 |
| 10+ | $1.260 |
| 25+ | $1.210 |
| 50+ | $1.160 |
| 100+ | $1.100 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.85
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD122N10N3GATMA1
Newark Part No.85X6027
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id59A
On Resistance Rds(on)0.0105ohm
Drain Source On State Resistance0.0122ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation94W
Power Dissipation Pd94W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
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Product Overview
- OptiMOS®3 power transistorIdeal for high frequency switching and synchronous rectification
- N-channel, normal level
- Excellent gate charge x RDS(on) product (FOM)
- Very low on-resistance R DS(on)
- Qualified according to JEDEC for target application
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.0105ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
94W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
59A
Drain Source On State Resistance
0.0122ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
Power Dissipation Pd
94W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate