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IPD60N10S4L12ATMA1
Power MOSFET, N Channel, 100 V, 60 A, 0.012 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPD60N10S4L12ATMA1
Newark Part No.13AC9043
Product RangeOptiMOS T2
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.936 |
| 10+ | $0.936 |
| 25+ | $0.936 |
| 50+ | $0.936 |
| 100+ | $0.904 |
| 250+ | $0.886 |
| 500+ | $0.841 |
| 1000+ | $0.811 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.94
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD60N10S4L12ATMA1
Newark Part No.13AC9043
Product RangeOptiMOS T2
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id60A
On Resistance Rds(on)0.0098ohm
Drain Source On State Resistance0.012ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation Pd94W
Power Dissipation94W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS T2
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.0098ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
94W
No. of Pins
3Pins
Product Range
OptiMOS T2
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.012ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
Power Dissipation
94W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate